The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Dec. 02, 2013
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Korea University Industrial & Academic Collaboration Foundation, Seoul, KR;
Inventors:
Duck Hwan Kim, Goyang-si, KR;
In Sang Song, Osan-si, KR;
Jea Shik Shin, Hwaseong-si, KR;
Ho Soo Park, Yongin-si, KR;
Jae-Sung Rieh, Seoul, KR;
Byeong Kwon Ju, Seoul, KR;
Assignees:
Samsung Electronics Co., Ltd., Suwon-si, KR;
KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/007 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/0019 (2013.01); B81B 3/0018 (2013.01); B81B 3/0021 (2013.01); H03H 3/0072 (2013.01);
Abstract
A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.