The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Jul. 25, 2014
Korea Institute of Energy Research, Daejeon, KR;
Shin Kun Ryi, Daejeon, KR;
Beom Seok Seo, Daejeon, KR;
Jong Soo Park, Daejeon, KR;
Dong Wook Lee, Daejeon, KR;
Sung Wook Lee, Daejeon, KR;
Korea Institute of Energy Research, Daejeon, KR;
Abstract
The present invention relates to a method for preparing a hydrogen separation membrane capable of preventing the plating of Pd inside a porous support and a porous shielding layer when a separation membrane is prepared; a hydrogen separation membrane prepared therefrom; and a use thereof. In addition, the present invention relates to a device for preparing a hydrogen separation membrane; and a method for preparing a hydrogen separation membrane using the device, and in particular, relates to a device for preparing a hydrogen separation membrane capable of stably growing a Pd-containing separation membrane for hydrogen gas separation as a plating solution grows from the upper surface of a porous support to a uniform thickness by simply shielding the lower surface of the porous support when a hydrogen separation membrane is prepared using an electroless plating method. Furthermore, the present invention relates to a device for preparing a hydrogen separation membrane, and in particular, relates to a device for preparing a hydrogen separation membrane capable of stably growing a composite membrane for hydrogen gas separation as a plating solution grows from the top of a porous support to a uniform thickness by simply shielding the bottom of the porous support.