The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jan. 28, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Seung-Sik Kim, Hwaseong-si, KR;

Young-Chan Kim, Seongnam-si, KR;

Tae-Han Kim, Suwon-si, KR;

Eun-Sub Shim, Anyang-si, KR;

Dong-Joo Yang, Seongnam-si, KR;

Min-Seok Oh, Osan-si, KR;

Moo-Sup Lim, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/3745 (2011.01); H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3745 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14812 (2013.01); H01L 27/14818 (2013.01); H01L 27/307 (2013.01);
Abstract

Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.


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