The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jul. 01, 2015
Applicant:

Telefonaktiebolaget L M Ericsson (Publ), Stockholm, SE;

Inventors:

William Hallberg, Mölndal, SE;

Mustafa Özen, Göteborg, SE;

Christian Fager, Mölnlycke, SE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0288 (2013.01); H03F 3/193 (2013.01); H03F 3/211 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21106 (2013.01);
Abstract

It is provided an amplifier arrangement for optimizing efficiency at a peak power level and a back-off power level γ. The amplifier arrangement comprises an input power splitter dividing an input signal into a first signal having a power Pand a second signal having a power P, a main transistor operating in a class-B like mode receiving the first signal, an auxiliary transistor operating in a class-C mode receiving the second signal. The received first and second signals have a phase offset value θ, wherein −π<θ<π. The amplifier arrangement further comprises a combining network. Circuit element values of the combining network, the power Pand the power P, the phase offset value θ, a bias condition of the auxiliary transistor; and a relative size Sof the auxiliary transistor, are based on a predetermined back-off power level γ, a current scaling factor rof the auxiliary transistor, a main transistor oversizing factor r, and an auxiliary transistor oversizing factor r, where r<1, r≧1 and r≧1. It is also provided a method for determining properties for an amplifier arrangement.


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