The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Feb. 10, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Xianzhi Dai, Shanghai, CN;

Farzan Farbiz, Dallas, TX (US);

Muhammad Yusuf Ali, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01);
Abstract

An electrostatic discharge (ESD) protection circuit includes a high power supply rail (VDD) and a low power supply rail (VSS). The ESD protection circuit further includes an active shunt transistor coupled between VDD and VSS. The active shunt transistor includes a gate. The ESD protection circuit also includes a sensing transistor connected between an input/output (I/O) pad and the gate of the active shunt transistor. If an ESD stress event occurs on the I/O pad or on a VDD pad, the sensing transistor is caused to be turned ON thereby permitting a voltage on the I/O or VDD pad experiencing the ESD stress event to turn ON the active shunt transistor in turn causing ESD current to flow from the pad experiencing the ESD event, through VDD, and through the active shunt transistor to VSS.


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