The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Sep. 10, 2014
Sharp Laboratories of America, Inc., Camas, WA (US);
Alexey Koposov, Vancouver, WA (US);
Wei Pan, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for forming a back contact perovskite solar cell. A substrate is coated with a positive electrode layer. The positive electrode layer is then conformally coated with a first insulator. A plurality of negative electrode segments are selectively deposited overlying the first insulator layer, and a second insulator layer is conformally deposited overlying the negative electrode segments and first insulator layer. The second insulator layer is selectively etched to expose the negative electrode segments, and an n-type semiconductor is selectively deposited overlying each exposed negative electrode segment to form n-type contacts. The first and second insulator layers are then selectively etched to expose positive electrode segments. A p-type semiconductor is selectively deposited over each exposed positive electrode segment to form p-type contacts. Finally, a hybrid organic/inorganic perovskite (e.g., CHNHPblCl) layer is conformally deposited overlying the p-type and n-type contacts. A back contact solar cell is also provided.