The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Mar. 29, 2013
Applicant:

Asahi Kasei Kabushiki Kaisha, Tokyo, JP;

Inventors:

Jun Koike, Tokyo, JP;

Yoshimichi Mitamura, Tokyo, JP;

Fujito Yamaguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/22 (2010.01); H01L 21/66 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 22/12 (2013.01); H01L 33/22 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01);
Abstract

In an optical substrate (), a concave-convex structure () including a plurality of independent convex portions (to) and concave portions () provided between the convex portions (to) is provided in a surface. The average interval Pave between the adjacent convex portions (to) in the concave-convex structure () satisfies 50 nm≦Pave≦1500 nm, and the convex portion () having a convex portion height hn satisfying 0.6 h≧hn≧0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000≦Z≦1/5. When the optical substrate () is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.


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