The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Feb. 27, 2015
Applicants:
Tohoku University, Sendai, Miyagi, JP;
Mie University, Tsu, Mie, JP;
Inventors:
Hiroyuki Fukuyama, Sendai, JP;
Hideto Miyake, Tsu, JP;
Assignees:
TOHOKU UNIVERSITY, Sendai, Miyagi, JP;
MIE UNIVERSITY, Tsu, Mie, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01S 5/323 (2013.01); H01S 2304/04 (2013.01);
Abstract
A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N/CO) mixed gas has a mixture ratio of Ngas/CO gas in a range of 0.95/0.05 to 0.4/0.6.