The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Aug. 16, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yong Seok Choi, Suwon-si, KR;
Chul Min Kim, Gunpo-si, KR;
Dong Gyu Shin, Seoul, KR;
Ho Chul Lee, Seongnam-si, KR;
Joo Young Cheon, Suwon-si, KR;
Do Young Rhee, Seoul, KR;
Jeong Wook Lee, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract
A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.