The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jun. 10, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Philippe Le Bars, Thorigne Fouillard, FR;

Walaa Sahyoun, Rennes, FR;

Wojciech Knap, Saint-Gely-du-Fesc, FR;

Nina Diakonova, Montpellier, FR;

Dominique Coquillat, Prades-le-Lez, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01L 31/113 (2006.01); H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); H01L 27/14 (2013.01); H01L 31/09 (2013.01); Y02P 70/521 (2015.11);
Abstract

At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.


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