The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Dec. 04, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Souichi Yoshida, Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
In an IGBT portion, a first gate electrode is provided in a first trench via a first gate insulating film. A thickness of a first gate insulating film lower portion is thicker than a thickness of a first gate insulating film upper portion, whereby a width of a mesa portion between adjacent first trenches is narrower at a portion of a collector side than at an emitter side. In a diode portion, a second gate electrode is provided inside a second trench via second gate insulating film. A width of the second trench is uniform along a depth direction or narrows from the emitter side toward the collector side. Widths of the second trench are narrower than a sum of a width of the first trench lower portion and the thickness of the first gate insulating film lower portion of both side walls of the first trench lower portion.