The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jul. 13, 2016
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Bernardette Kunert, Wilsele, BE;

Robert Langer, Leuven, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 29/045 (2013.01); H01L 29/0676 (2013.01); H01L 29/205 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01);
Abstract

The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a III-V structure abutting the silicon monocrystalline substrate. The semiconductor structure includes an InGaAs structure overlaying the III-V structure, where a is from 0.40 to 1, b from 0 to 0.60, and a+b equal to 1.00. The III-V structure has a top surface facing away from the silicon substrate. The top surface is GaXPSbZ, where X includes one or more group III elements other than Ga and Z is one or more group V elements other than P or Sb. g is from 0.80 to 1.00, x is from 0 to 0.20, z is from 0 to 0.30, p is from 0.10 to 0.55, and s is from 0.50 to 0.80, g+x is equal to 1.00 and p+s+z is equal to 1.00.


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