The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Aug. 04, 2015
Applicant:
Samsung Display Co., Ltd., Yongin, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 21/477 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 21/477 (2013.01); H01L 21/47576 (2013.01); H01L 27/3248 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract
An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.