Coa woled structure and manufacturing method thereof

Abstract

The present invention provides a COA WOLED structure and a manufacturing method thereof. The structure includes red/green/blue sub pixel zones and each sub pixel zone includes a substrate, a gate terminal, a gate insulation layer, an oxide semiconductor layer, an etch stop layer, source/drain terminals, a passivation protection layer, a red/green/blue photoresist layer, a planarization layer, a semi-reflection layer, a transparent photoresist layer, an anode layer, a pixel definition layer, a photo spacer, a white light emission layer, a cathode layer, and a packaging lid. The present invention arranges a metal semi-reflection layer on a planarization layer and a transparent photoresist layer on the semi-reflection layer and the thickness of the transparent photoresist layer corresponding to each of red/green/blue photoresist layers is so controlled as to obtain an optimum micro cavity length corresponding to each of different colors of light thereby enhance the light emission efficiency of the three primary colors of red/green/blue transmitting through a color filter by using micro cavity resonance thereby effectively increasing the brightness of a COA WOLED device.