The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Jun. 24, 2014
Galaxycore Shanghai Limited Corporation, Shanghai, CN;
Galaxycore Shanghai Limited Corporation, Shanghai, CN;
Abstract
A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer () and formed on an upper surface of a first conductive type semiconductor substrate (), the gate structure () comprising: gate oxide (), a gate layer (), and a gate sidewall (), and the gate structure () correspondingly covering the photodiode; and a floating diffusion zone (), formed in the first conductive type semiconductor substrate () and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (), so that a dark current is effectively prevented from being produced.