The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Mar. 20, 2015
Applicant:
Raytheon Company, Waltham, MA (US);
Inventor:
Thomas B. Reed, North Reading, MA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/07 (2006.01); H01L 29/417 (2006.01); H03F 1/22 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 27/0296 (2013.01); H01L 27/0733 (2013.01); H01L 29/41725 (2013.01); H03F 1/223 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 2200/174 (2013.01); H03F 2200/315 (2013.01); H03F 2200/451 (2013.01); H03F 2200/75 (2013.01);
Abstract
A cascode transistor circuit having an active region, the active region having a source, a drain, a floating source/drain, a first gate disposed between the source and the floating source/drain and a second gate disposed between the floating source/drain and the drain. A first gate pad is displaced from the active region and is electrically connected to the first gate and a second gate pad is displaced from the active region and is electrically connected to the second gate. The first and the second gate pads are disposed on opposite sides of the active region.