The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Apr. 05, 2016
Globalfoundries Inc., Grand Cayman, KY;
Suraj K. Patil, Ballston Lake, NY (US);
Zhiguo Sun, Halfmoon, NY (US);
Keith Tabakman, Gansevoort, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method that includes, among other things, forming first and second contact openings in a layer of insulating material that respectively expose a portion of first and second source/drain (S/D) regions of first and second transistors that are of the opposite type, forming first, second and third layers of material within each of the first and second contact openings, and forming an implant masking layer that masks the first contact opening while leaving the second contact opening exposed for further processing. The method also includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, removing the implant masking layer and forming a conductive material in both the first and second contact openings so as to define first and second MIS contact structures positioned in the first and second contact openings.