The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Oct. 14, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Fen Chen, Williston, VT (US);

Jeffrey P. Gambino, Portland, OR (US);

Zhong-Xiang He, Essex Junction, VT (US);

Trevor A. Thompson, Jeffersonville, VT (US);

Eric J. White, Charlotte, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 23/12 (2006.01); H01L 29/40 (2006.01); H01L 29/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/2885 (2013.01); H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 23/528 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.


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