The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Apr. 11, 2014
Applicant:

Lsi Corporation, Milpitas, CA (US);

Inventors:

Mark A. Bachman, Sinking Spring, PA (US);

Sailesh M. Merchant, Macungie, PA (US);

John Osenbach, Kutztown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76837 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 2221/1005 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously.


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