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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9613821 B1

PDFFull Text
Date of Patent:
Apr. 04, 2017

Filed:

Apr. 24, 2015

Method of forming patterns and method of manufacturing integrated circuit device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yool Kang, Yongin-si, KR;

Dong-won Kim, Seongnam-si, KR;

Ju-young Kim, Hwaseong-si, KR;

Tae-hoon Kim, Anyang-si, KR;

Hye-ji Kim, Seoul, KR;

Su-min Park, Yongin-si, KR;

Hyung-rae Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Caleen Sullivan

Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76816 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01);
Abstract

Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

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