The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Mar. 14, 2016
Applicant:
Inotera Memories, Inc., Taoyuan, TW;
Inventor:
Kuo-Yao Chou, Taichung, TW;
Assignee:
INOTERA MEMORIES, INC., Taoyuan, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); G03F 7/00 (2006.01); B81C 1/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); B81C 1/00031 (2013.01); G03F 7/0002 (2013.01); G03F 7/0035 (2013.01); G03F 7/2016 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/02318 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); B81C 2201/0149 (2013.01);
Abstract
A method of forming patterns includes the steps of providing a substrate having a target layer thereon; forming a plurality of first resist patterns on the target layer; depositing a directed self-assembly (DSA) material layer in a blanket manner on the first resist patterns, wherein the DSA material layer fills up a gap between the first resist patterns; subjecting the DSA material layer to a self-assembling process so as to form repeatedly arranged block copolymer patterns in the DSA material layer; and removing undesired portions from the DSA material layer to form second resist patterns on the target layer.