The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Feb. 18, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyun-Yong Go, Suwon-si, KR;
Jin-Gyun Kim, Suwon-si, KR;
Dong-Kyum Kim, Suwon-si, KR;
Jung-Ho Kim, Seongnam-si, KR;
Koong-Hyun Nam, Seoul, KR;
Sung-Hae Lee, Suwon-si, KR;
Eun-Young Lee, Hwaseong-si, KR;
Jung-Geun Jee, Seoul, KR;
Eun-Yeoung Choi, Seoul, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.