The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Feb. 27, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Ryuji Yamamoto, Kodaira, JP;

Yoshiro Hirose, Toyama, JP;

Satoshi Shimamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01);
Abstract

A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.


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