The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Dec. 14, 2013
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jian Shen, San Diego, CA (US);
Lew Go Chua-Eoan, Carlsbad, CA (US);
Assignee:
Qualcomm Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/16 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 7/1009 (2013.01); G11C 7/109 (2013.01); G11C 7/12 (2013.01); G11C 11/1673 (2013.01); G11C 2207/2263 (2013.01);
Abstract
A method includes performing a memory operation at a magnetic tunnel junction (MTJ) storage element by, during a single memory clock cycle, reading a first value stored at the MTJ storage element, comparing the first value to a second value to be stored at the MTJ storage element, and selectively writing the second value to the MTJ storage element based on the comparison.