The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Nov. 14, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yoshihito Hara, Osaka-shi, JP;
Yukinobu Nakata, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A semiconductor deviceaccording to the present invention includes a first electrode G (g) formed on a substrate B, a first insulation film GI to cover the first electrode g, a semiconductor film SF including a channel CH, an etching stopper film ES, and a second electrode S (s). The semiconductor film SF is formed on the first insulation film GI with overlapping the first electrode gso that an edge portion SFthereof projects outwardly from the first electrode gin a plan view. The etching stopper film ES is formed of an insulation film and formed on the semiconductor film SF and the first insulation film GI to cover the channel CH. The etching stopper film ES includes a hole H (hd) in which the edge portion SFof the semiconductor film SF is and through which a surface of a portion of the semiconductor film SF near the channel CH is exposed in a plan view. The second electrode S (s) is disposed on the semiconductor film SF to cover the surface of the portion of the semiconductor film SF exposed through the hole H (hd).