The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9612459 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 04, 2017

Filed:

Jul. 01, 2014
Applicant:

Laxense Inc., Walnut, CA (US);

Inventors:

Ningning Feng, Arcadia, CA (US);

Xiaochen Sun, Chino Hills, CA (US);

Assignee:

LAXENSE INC., Walnut, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/25 (2006.01); G02F 1/225 (2006.01); G02F 1/025 (2006.01); G02F 1/015 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/2257 (2013.01); G02F 2001/0152 (2013.01); G02F 2001/212 (2013.01);
Abstract

The invention provides methods of forming an optical device, in particular, a silicon optical modulator using shallow rib waveguide structure. According to the embodiments of the present invention, the silicon optical waveguide modulator includes a shallow rib waveguide with asymmetric shoulder heights disposed on a surface of a substrate; one side terminated by the waveguide edge and the other side terminated by a second laterally oriented PN junction, a first vertically oriented PN junction is positioned inside the light propagation region of the waveguide; and higher doping regions with the same type of doping type of the adjoining regions are positioned on the asymmetric shoulders outside the light propagation regions in electrical contact with metal contacts.


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