The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Mar. 13, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Toru Mikami, Yokkaichi, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/16 (2006.01); G01B 11/02 (2006.01); G01J 3/44 (2006.01); G01J 3/02 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01); G01J 3/28 (2006.01);
U.S. Cl.
CPC ...
G01B 11/02 (2013.01); G01J 3/0264 (2013.01); G01J 3/4412 (2013.01); G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G01J 2003/284 (2013.01); G01N 2021/95615 (2013.01);
Abstract

In accordance with an embodiment, a measurement apparatus includes a library creation unit, a spectral profile acquiring unit, and a measurement unit. The library creation unit creates a library in which a layer stack model is matched to a theoretical profile regarding a pattern of stacked layers. The spectral profile acquiring unit acquires an actual measured profile by applying light to a measurement target pattern obtained when the pattern is actually created. The measurement unit measures the sectional shape of the measurement target pattern by performing fitting of the theoretical profile to the actual measured profile. The layer stack model is created by calculating a feature value that reflects the intensity of reflected light from an interface for each of the layers, determining a priority order of analysis from the feature value, and sequentially performing fitting of the theoretical profile to the measured profile in the determined priority order.


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