The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jan. 25, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhenbin Ge, San Jose, CA (US);

Alan Ritchie, Menlo Park, CA (US);

Adolph Miller Allen, Oakland, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); C23C 14/34 (2006.01); C23C 14/04 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/046 (2013.01); C23C 14/345 (2013.01); C23C 14/3492 (2013.01); C23C 14/351 (2013.01); H01J 37/3299 (2013.01); H01J 37/32706 (2013.01); H01J 37/3405 (2013.01);
Abstract

Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.


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