The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Mar. 22, 2016
Applicant:

Sumitomo Precision Products Co., Ltd., Hyogo, JP;

Inventors:

Yasuyuki Hirata, Hyogo, JP;

Gen Matsuoka, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); B81C 1/00 (2006.01); G02B 26/08 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00492 (2013.01); B81B 3/0086 (2013.01); B81C 1/00404 (2013.01); B81C 1/00603 (2013.01); G02B 26/0841 (2013.01); B81B 2201/042 (2013.01); B81B 2203/0136 (2013.01); B81C 2201/0102 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0198 (2013.01);
Abstract

At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.


Find Patent Forward Citations

Loading…