The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Mar. 24, 2015
Applicant:
Invensense, Inc., San Jose, CA (US);
Inventors:
Fang Liu, San Jose, CA (US);
Martin Lim, San Mateo, CA (US);
Jong Il Shin, San Jose, CA (US);
Jongwoo Shin, Pleasanton, CA (US);
Assignee:
INVENSENSE, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/001 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81C 2201/115 (2013.01); B81C 2203/0792 (2013.01);
Abstract
Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.