The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Nov. 07, 2012
Applicant:
Imec, Leuven, BE;
Inventor:
Nick Van Helleputte, Korbeek Dijle, BE;
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); A61B 5/00 (2006.01); A61B 5/04 (2006.01); A61B 5/0402 (2006.01); A61B 5/053 (2006.01); H01L 27/08 (2006.01); H03F 1/56 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
A61B 5/7214 (2013.01); A61B 5/0402 (2013.01); A61B 5/04017 (2013.01); A61B 5/0531 (2013.01); H01L 27/0811 (2013.01); H03F 1/56 (2013.01); H03F 3/45475 (2013.01); H03F 2200/213 (2013.01); H03F 2200/261 (2013.01); H03F 2203/45538 (2013.01); H03F 2203/45544 (2013.01); H03F 2203/45548 (2013.01); H03F 2203/45576 (2013.01);
Abstract
A variable capacitor circuit is disclosed. The variable capacitor circuit includes a plurality of MOS capacitors, each MOS capacitor being implemented by a MOS transistor with the gate terminal connected to a first voltage signal and with the drain terminal shorted with the source terminal and connected to a second voltage signal, said MOS capacitors being connected in parallel through the gate terminal connected to the first voltage signal, and being operated in a cut-off region in which the equivalent capacitance of each MOS capacitor remains substantially constant for variations of the first voltage signal.