The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jul. 02, 2015
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Ryuichi Mishima, Machida, JP;
Hideaki Ishino, Fujisawa, JP;
Kenji Togo, Kawasaki, JP;
Masatsugu Itahashi, Yokohama, JP;
Takehito Okabe, Atsugi, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H04N 5/3745 (2011.01); H01L 27/088 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3745 (2013.01); H01L 27/088 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14625 (2013.01); H01L 27/14632 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 31/022408 (2013.01); H01L 21/823418 (2013.01); H01L 21/823462 (2013.01); H01L 27/0617 (2013.01); H01L 27/1464 (2013.01);
Abstract
A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.