The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Dec. 05, 2012
Applicant:
Tm4 Inc., Boucherville, CA;
Inventors:
Jean-Marc Cyr, Candiac, CA;
Mohammed Amar, Montreal, CA;
Pascal Fleury, Sainte-Madeleine, CA;
Maalainine El Yacoubi, Montreal, CA;
Assignee:
TM4 INC., Quebec, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); H03K 17/60 (2006.01); H02M 1/08 (2006.01); H02M 1/32 (2007.01); H03K 17/082 (2006.01); H03K 17/16 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H02M 1/08 (2013.01); H02M 1/32 (2013.01); H03K 17/0828 (2013.01); H03K 17/166 (2013.01); H03K 17/60 (2013.01); H02M 2001/0029 (2013.01);
Abstract
A turn-off overvoltage limiting for IGBT is described herein. The injection of a sample of the overvoltage across the IGBT in the gate drive to slow down the slope of the gate voltage decrease only during the overvoltage above a predetermined value is described herein. Techniques to increase the parasitic inductance to allow the control to limit an overvoltage at turn off of the second IGBT are also described herein.