The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Sep. 12, 2013
Qualcomm Incorporated, San Diego, CA (US);
Ahmed Abdel Monem Youssef, San Diego, CA (US);
Prasad Srinivasa Siva Gudem, San Diego, CA (US);
Li-Chung Chang, Irvine, CA (US);
Ehab Ahmed Sobhy Abdel Ghany, San Diego, CA (US);
Qualcomm Incorporated, San Diego, CA (US);
Abstract
Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transistor, and/or between the drain and ground, etc. In certain exemplary embodiments, the amplifier may be a cascode amplifier. Further aspects for effectively dealing with ESD phenomena are described.