The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Sep. 26, 2013
Arkadiy Lyakh, Santa Monica, CA (US);
Richard Maulini, Los Angeles, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
C. Kumar N. Patel, Los Angeles, CA (US);
Arkadiy Lyakh, Santa Monica, CA (US);
Richard Maulini, Los Angeles, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
C. Kumar N. Patel, Los Angeles, CA (US);
PRANALYTICA, INC., Santa Monica, CA (US);
Abstract
An improved longwave infrared quantum cascade laser. The improvement includes a strained InGaAs/AlInAs composition, with x and y each between 0.53 and 1, an active region emitting at a wavelength equal to or greater than 8 μm, an energy spacing Eequal to or greater than 50 meV, an energy spacing Eequal to or greater than 250 meV, and an optical waveguide with a cladding layer on each side of the active region. Each cladding layer has a doping level of about 2·10cm. The optical waveguide also has a top InP layer with a doping level of about 5·10cmand a bottom InP layer with a doping level of about 5 10cm. Additionally, the optical waveguide has a plasmon layer with a doping level of about 8·10cm.