The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Dec. 17, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Roland Enzmann, Regensburg, DE;

Markus Horn, Straubing, DE;

Markus Graul, Regensburg, DE;

Thomas Veit, Mintraching, DE;

Juergen Dachs, Baar-Ebenhausen, DE;

Stefan Listl, Pettendorf, DE;

Markus Arzberger, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/323 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0201 (2013.01); H01S 5/0206 (2013.01); H01S 5/02236 (2013.01); H01S 5/02272 (2013.01); H01S 5/32333 (2013.01); H01S 5/0202 (2013.01); H01S 5/0226 (2013.01); H01S 5/02268 (2013.01); H01S 5/323 (2013.01);
Abstract

Method for producing semiconductor laser elements () comprises A) providing a carrier composite () having a plurality of carriers () for the semiconductor laser elements (), B) providing a laser bar () having a plurality of semiconductor laser diodes () which comprise a common growth substrate () and a semiconductor layer sequence () grown thereon, C) generating predetermined breaking points () on a substrate underside () of the growth substrate (), said substrate underside facing away from the semiconductor layer sequence (), D) attaching the laser bar () to a carrier upper side () of the carrier composite (), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (), wherein steps B) to E) are performed in the indicated sequence.


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