The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Mar. 02, 2015
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Mikio Aramata, Usui-gun, JP;
Satoru Miyawaki, Usui-gun, JP;
Hirofumi Fukuoka, Usui-gun, JP;
Kazuma Momii, Usui-gun, JP;
Kouichi Urano, Annaka, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/04 (2006.01); H01M 4/13 (2010.01); H01M 4/139 (2010.01); H01M 4/38 (2006.01); H01M 4/58 (2010.01); H01M 4/134 (2010.01); H01M 10/44 (2006.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/0421 (2013.01); H01M 4/13 (2013.01); H01M 4/134 (2013.01); H01M 4/139 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/58 (2013.01); H01M 10/44 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01); Y02E 60/122 (2013.01); Y02P 70/54 (2015.11); Y10T 428/2993 (2015.01);
Abstract
A silicon composite comprises silicon particles whose surface is at least partially coated with a silicon carbide layer. It is prepared by subjecting a silicon powder to thermal CVD with an organic hydrocarbon gas and/or vapor at 900-1,400° C., and heating the powder for removing an excess free carbon layer from the surface through oxidative decomposition.