The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Sep. 03, 2015
Applicant:

Basf SE, Ludwigshafen, DE;

Inventors:

Tero Mustonen, Binningen, CH;

Roger Pretot, Basel, CH;

Tomi Hassinen, Vantaa, FI;

Assignee:

BASF SE, Ludwigshafen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/05 (2006.01); C09B 57/00 (2006.01); C09B 69/10 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/057 (2013.01); C09B 57/004 (2013.01); C09B 69/109 (2013.01); H01L 51/0508 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01);
Abstract

The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.


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