The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Apr. 27, 2012
Ken-ichi Nakayama, Yonezawa, JP;
Junji Kido, Yonezawa, JP;
Ryotaro Akiba, Yonezawa, JP;
Naomi Oguma, Tokyo, JP;
Naoki Hirata, Tokyo, JP;
Ken-ichi Nakayama, Yonezawa, JP;
Junji Kido, Yonezawa, JP;
Ryotaro Akiba, Yonezawa, JP;
Naomi Oguma, Tokyo, JP;
Naoki Hirata, Tokyo, JP;
DAINICHISEIKA COLOR & CHEMICALS MFG. CO., LTD., Tokyo, JP;
Other;
Abstract
The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.