The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9608214 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 28, 2017

Filed:

Apr. 10, 2013
Applicant:

Postech Academy—industry Foundation, Pohang-si, Gyeongsangbuk-do, KR;

Inventors:

TaeWoo Lee, Pohang-si, KR;

YoungHoon Kim, Daejeon, KR;

Assignee:

POSTECH ACADEMY-INDUSTRY FOUNDATION, Pohang-si, Gyeongsangbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/44 (2006.01); H01L 51/52 (2006.01); H01L 21/02 (2006.01); H05B 33/26 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0096 (2013.01); H01L 21/02425 (2013.01); H01L 51/442 (2013.01); H01L 51/5215 (2013.01); H01L 51/5218 (2013.01); H01L 51/5221 (2013.01); H05B 33/26 (2013.01); H01L 2251/305 (2013.01); Y02E 10/549 (2013.01);
Abstract

Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a metal layer composed of a non-ferrous metal, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the metal layer, and the second root mean square roughness is smaller than the first root mean square roughness.


Find Patent Forward Citations

Lee, TaeWoo. (2017). Integrated conductive substrate, and electronic device employing same (U.S. Patent No. 9608214). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9608214

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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