The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Jun. 21, 2011
Applicants:

Hisataka Ito, Osaka, JP;

Toshitaka Nakamura, Osaka, JP;

Hironaka Fujii, Osaka, JP;

Inventors:

Hisataka Ito, Osaka, JP;

Toshitaka Nakamura, Osaka, JP;

Hironaka Fujii, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/00 (2010.01); H01L 33/54 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/54 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8592 (2013.01);
Abstract

The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.


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