The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Mar. 12, 2012
David B. Slater, Jr., Durham, NC (US);
John Edmond, Cary, NC (US);
Matthew Donofrio, Raleigh, NC (US);
David B. Slater, Jr., Durham, NC (US);
John Edmond, Cary, NC (US);
Matthew Donofrio, Raleigh, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method of forming an ohmic contact for a semiconductor device can be provided by thinning a substrate to provide a reduced thickness substrate and providing a metal on the reduced thickness substrate. Laser annealing can be performed at a location of the metal and the reduced thickness substrate at an energy level to form a metal-substrate material to provide the ohmic contact thereat.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile