The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Jan. 27, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Nam Goo Cha, Ansan-si, KR;

Bong Jin Kuh, Suwon-si, KR;

Han Mei Choi, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 33/20 (2010.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/005 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); B82Y 20/00 (2013.01);
Abstract

A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.


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