The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Nov. 16, 2015
Applicant:
Playnitride Inc., Tainan, TW;
Inventors:
Shen-Jie Wang, Tainan, TW;
Yu-Chu Li, Tainan, TW;
Assignee:
PlayNitride Inc., Tainan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/14 (2010.01); H01L 33/02 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/02 (2013.01); H01L 33/04 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.