The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Feb. 05, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 31/18 (2006.01); G01N 23/20 (2006.01); H01L 31/0304 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); G01N 23/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02398 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02507 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 22/12 (2013.01); H01L 27/14694 (2013.01); H01L 31/03046 (2013.01); H01L 31/184 (2013.01); G01N 2223/611 (2013.01); G01N 2223/615 (2013.01); Y02E 10/544 (2013.01);
Abstract
A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.