The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Apr. 09, 2015
Walter J. Dressick, Waldorf, MD (US);
Jasbinder S. Sanghera, Ashburn, VA (US);
Woohong Kim, Lorton, VA (US);
Colin C. Baker, Alexandria, VA (US);
Jason D. Myers, Alexandria, VA (US);
Jesse A. Frantz, Landover, MD (US);
Walter J. Dressick, Waldorf, MD (US);
Jasbinder S. Sanghera, Ashburn, VA (US);
Woohong Kim, Lorton, VA (US);
Colin C. Baker, Alexandria, VA (US);
Jason D. Myers, Alexandria, VA (US);
Jesse A. Frantz, Landover, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.