The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Nov. 10, 2013
Applicant:

Hitachi Chemical Company, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Youichi Machii, Tsukuba, JP;

Masato Yoshida, Tsukuba, JP;

Takeshi Nojiri, Tsukuba, JP;

Kaoru Okaniwa, Tsukuba, JP;

Mitsunori Iwamuro, Tsukuba, JP;

Shuichiro Adachi, Tsukuba, JP;

Tetsuya Sato, Tsukuba, JP;

Keiko Kizawa, Tsukuba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0288 (2006.01); C03C 8/18 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 21/04 (2006.01); C03C 3/097 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0288 (2013.01); C03C 3/097 (2013.01); C03C 8/18 (2013.01); H01L 21/04 (2013.01); H01L 21/22 (2013.01); H01L 21/2225 (2013.01); H01L 21/2255 (2013.01); H01L 31/0236 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.


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