The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Feb. 27, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Yasuhiro Yamada, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); G01N 23/04 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78648 (2013.01); G01N 23/04 (2013.01); H01L 27/1237 (2013.01); H01L 27/14601 (2013.01); H01L 27/14658 (2013.01); H01L 27/14692 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78603 (2013.01); H01L 29/78672 (2013.01);
Abstract

A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.


Find Patent Forward Citations

Loading…