The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Sep. 10, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:
Assignee:

Micro Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/115 (2006.01); H01L 29/49 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 27/11521 (2017.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/1159 (2017.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 21/28291 (2013.01); H01L 27/1159 (2013.01); H01L 27/11521 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/6684 (2013.01); H01L 29/788 (2013.01); H01L 27/11597 (2013.01); H01L 29/4236 (2013.01);
Abstract

Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another.


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