The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Apr. 21, 2016
Texas Instruments Incorporated, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An n-channel DEMOS device a pwell finger defining a length and a width direction formed within a doped surface layer. A first nwell is on one side of the pwell finger including a source and a second nwell on an opposite side of the pwell finger includes a drain. A gate stack is over a channel region the pwell finger between the source and drain. A field dielectric layer is on the surface layer defining a first active area including a first active area boundary along the width direction (WD boundary) that has the channel region therein. A first p-type layer is outside the first active area at least a first minimum distance from the WD boundary and a second p-type layer is doped less and is closer to the WD boundary than the first minimum distance.